GS-065-011-1-L 650 V E-mode GaN transistor

650 V enhancement mode power transistor

• Bottom-cooled, small 5x6 mm PDFN package

• RDS(on) = 150 mΩ • IDS(max) = 11 A

• Ultra-low FOM

• Simple gate drive requirements (0 V to 6 V)

• Transient tolerant gate drive (-20 V / +10 V)

• High switching frequency (> 1 MHz)

• Fast and controllable fall and rise times

• Reverse conduction capability

• Zero reverse recovery loss

• Source Sense (SS) pin for optimized gate drive

• RoHS 3 (6+4) compliant

Power Adapters • LED Lighting Drivers • Fast Battery Charging • Power Factor Correction • Appliance Motor Drives • Wireless Power Transfer • Industrial Power Supplies